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A standard CMOS inverter is designed with equal rise and fall times (ฮฒ๐‘› = ฮฒp). If the width of the pMOS transistor in the inverter is increased

A standard CMOS inverter is designed with equal rise and fall times (ฮฒ๐‘› = ฮฒp). If the width of the pMOS transistor in the inverter is increased

Q. A standard CMOS inverter is designed with equal rise and fall times (ฮฒ๐‘› = ฮฒp). If the width of the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise margin (๐‘๐‘€๐ฟ) and the HIGH noise margin ๐‘๐‘€๐ป?

A. ๐‘๐‘€๐ฟ increases and ๐‘๐‘€๐ป decreases.

B. ๐‘๐‘€๐ฟ decreases and ๐‘๐‘€๐ป increases.

C. Both ๐‘๐‘€๐ฟ and ๐‘๐‘€๐ป increase.

D. No change in the noise margins.

Ans: NML increases and NMH decreases

Solution:

The behavior of the CMOS inverter for static conditions of operation is described by the voltage transfer characteristics (VTC) and for dynamic operation, the condition is described by the time response during switching conditions. VOH = VDD

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