![The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with Φms = 0 V and no oxide charges.](https://www.gkseries.com/blog/wp-content/uploads/2023/08/The-figure-shows-the-high-frequency-C-V-curve-of-a-MOS-capacitor-at-T-300-K-with-Φms-0-V-and-no-oxide-charges.jpg)
Q. The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with Φms = 0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points
![](https://www.gkseries.com/blog/wp-content/uploads/2023/08/image-12.png)
(A) P, Q, R
(B) Q, R, P
(C) R, P, Q
(D) Q, P, R
Ans: Q, R, P
Solution:
1) Flat band voltage is the voltage where there is a no-charge present in the oxide or oxide semiconductor interface. 2) As the gate voltage Va increase, more electrons are attracted to the oxide-semiconductor interface. A-n type channel is formed. The inversion takes place at R 3) For negative gate voltage, more holes are accumulated near the gate. Accumulations take place at P.