Semiconductor Diode MCQs | Semiconductor Diode Multiple Choice Questions and Answers

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Questions
1 A crystal diode has ………
A one pn junction
B two pn junctions
C three pn junctions
D none of the above

Answer: one pn junction
2 A crystal diode has forward resistance of the order of ……………
A kΩ
B Ω
C MΩ
D none of the above

Answer: Ω
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3 A crystal diode is used as ……………
A an amplifier
B a rectifier
C an oscillator
D a voltage regulator

Answer: a rectifier
4 An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
A conductor
B insulator
C resistance material
D None of the above

Answer: conductor
5 The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ………….
A 1 : 1
B 100 : 1
C 1000 : 1
D 40,000 : 1

Answer: 40,000 : 1
6 The leakage current in a crystal diode is due to …………….
A Minority Carriers
B Majority Carriers
C Junction Capacitance
D None Of The Above

Answer: Minority Carriers
7 The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
A The Same As
B Lower Than
C More Than
D None Of The Above

Answer: Lower Than
8 The knee voltage of a crystal diode is approximately equal to ………….
A Applied Voltage
B Breakdown Voltage
C Forward Voltage
D Barrier Potential

Answer: Barrier Potential
9 A crystal diode is a …………… device
A Non-Linear
B Bilateral
C Linear
D None Of The Above

Answer: Non-Linear
10 A crystal diode utilises …………….. characteristic for rectification
A Reverse
B Forward
C Forward Or Reverse
D None Of The Above

Answer: Forward
11 Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as such the p-n junction so formed would be termed as a
A p– n–
B p+ n–
C p– n+
D p+ n+

Answer: p+ n–
12 In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.
A holes, holes
B electrons, electrons
C holes, electrons
D electrons, holes

Answer: electrons, holes
13 Which of the below mentioned statements is false regarding a p-n junction diode?
A Diode are uncontrolled devices
B Diodes are rectifying devices
C Diodes are unidirectional devices
D Diodes have three terminals

Answer: Diodes have three terminals
14 The maximum efficiency of a half-wave rectifier is ………………..
A 40.6 %
B 81.2 %
C 50 %
D 25 %

Answer: 40.6 %
15 The most widely used rectifier is ……………….
A half-wave rectifier
B centre-tap full-wave rectifier
C bridge full-wave rectifier
D none of the above

Answer: bridge full-wave rectifier
16 The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction.
A holes
B electrons
C both holes & electrons
D phonons

Answer: holes
17 The n-region has a greater concentration of _________ as compared to the p-region in a P-N junction diode.
A holes
B electrons
C both holes & electrons
D phonons

Answer: electrons
18 A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities
A acceptor, donor
B acceptor, acceptor
C donor, donor
D donor, acceptor

Answer: acceptor, donor
19 In the breakdown region, a zener didoe behaves like a …………… source.
A constant voltage
B constant current
C constant resistance
D none of the above

Answer: constant voltage
20 A zener diode is …………………. device
A A Non-Linear
B A Linear
C An Amplifying
D None Of The Above

Answer: A Non-Linear

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